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22-27 October 2018
Mahatma Mandir Conference Centre
Asia/Kolkata timezone
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Negative ion beam source physics as a complex system: identification of main processes and key interdependence

26 Oct 2018, 08:30
4h
Mahatma Mandir Conference Centre

Mahatma Mandir Conference Centre

Gandhinagar (nearest Airport: Ahmedabad), India
Poster FIP - Fusion Engineering, Integration and Power Plant Design P7 Posters

Speaker

Dr Vanni Antoni (Consorzio RFX)

Description

A key component of ITER is the heating Neutral Beam Injector (NBI) system, expected to be the main source of the input power necessary to reach fusion conditions. The nominal parameters of the ITER NBI (40 A negative H-/D- ion beam accelerated to 1 MeV and then neutralized) are so challenging that they require extensive international research and development activities. Reliable operation of NBI for one hour remains an open issue: it results from several processes, mutually interacting in a non-linear way. In this contribution, complex network theory is applied to the physical processes (nodes) affecting generation, extraction and acceleration of negative ions in the simpler case of the NIO1 experiment, operating at Consorzio RFX. The number of driver nodes is 4; preferential matching identifies multiple sets of driver nodes. The most frequently identified driver nodes are interpreted as the most relevant processes: deflection of H- in the PG-EG gap depends on meniscus asymmetry, linked due to non-uniform ion flow in the plasma, as experimentally found; gas pressure in the vessel drives the compensation of the beam space charge, allowing the beam to propagate with no divergence increase. Evidence of the latter driver node spurred the investigation of the beam-generated plasma by means of a Retarding Field Energy Analyzer and numerical simulations. Two surface phenomena will be discussed in the contribution, as they are very important for the NBI operation and must be included in the complex network. H- production is enhanced by evaporating cesium over the source wall material. The arrangement of the cesium atoms is correctly simulated by molecular dynamics: the resulting imperfect film is found to be affected by moderate temperature, which allows redistribution of cesium, whereas higher temperatures disorder again the film leading to evaporation. Another key role played by surfaces regards high voltage holding, for which a novel model, based on the assumption of a dielectric layer (oxidized metal), is proposed. When the dielectric strength of the layer is exceeded, quantum mechanical computations provide the current, which acts as a trigger for breakdown.
Paper Number FIP/P7-40
Country or International Organization Italy

Primary author

Dr Vanni Antoni (Consorzio RFX)

Co-authors

Dr Antonio De Lorenzi (itRFX) Dr Emanuele Sartori (itRFX) Dr Emanuele Spada (itRFX) Dr GIANLUIGI SERIANNI (ItRFX) Prof. Giuseppe Chitarin (itRFX) Dr Marco Cavenago (INFN-LNL) Mr Nicolo' Alvise Ferron (itRFX) Dr Pierluigi Veltri (Consorzio RFX) Dr Piero Agostinetti (itRFX) Dr Samir Suweis (Physics and Astronomy Dept. “G. Galilei” & CNISM, INFN, University of Padova, via Marzolo 8, 35131 Padova, Italy) Prof. Savino Longo (Dipartimento di Chimica, Università degli Studi “Aldo Moro”, Bari)

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Paper