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24–28 Apr 2017
IAEA Headquarters
Europe/Vienna timezone

Radiation Induced Oxidation, Cross-Linking and Grafting of Ultra-High Molecular Weight Polythylene

28 Apr 2017, 12:25
10m
IAEA Board Room B/M1

IAEA Board Room B/M1

Oral RADIATION SYNTHESIS AND MODIFICATION OF MATERIALS A15

Speaker

Mr Guozhong Wu (Shanghai Institute of Applied Physics, China)

Description

Ultra-high molecular weight polyethylene (UHMWPE) has excellent chemical inertness, biocompatibility, mechanical property and wear-resistance, which is widely used in engineering and medical fields. Some drawbacks of UHMWPE need overcome by radiation processing, such as poor compatibility, creep-resistance and yield strength. In this work, radiation oxidation and grafting were adopted to modify the surface property of UHMWPE. Radiation cross-linking and annealing were used to improve the creep-resistance, yield strength and wear resistance of UHMWPE. The results indicated that radiation oxidation and grafting could effectively change chemical groups on the surface of UHMWPE. However, radiation oxidation could not remarkably improve the surface property of UHMWPE, such as hydrophilicity, even at a dose of 300 kGy by gamma irradiation in air [1]. Radiation grafting of acrylic acid could significantly improve the hydrophilicity of the UHMWPE powder. The UHMWPE powder with grafting yield of less than 10% presented a good dispersion in water. Radiation cross-linking and annealing improved creep-resistance and yield strength of the UHMWPE sheets. The cross-linked UHMWPE sheet with a dose of 300 kGy was without obvious deformation under a load of 0.06 MPa at 270 °C in 4 h [2]. In addition, the cross-linked UHMWPE powder as an additive, even at low content, could improve the wear resistance of pristine UHMWPE. In conclusion, the surface and mechanical properties of UHMWPE can be effectively improved by radiation processing.
Country/Organization invited to participate China

Primary author

Mr Guozhong Wu (Shanghai Institute of Applied Physics, China)

Co-authors

Mr Honglong Wang (Shanghai Institute of Applied Physics, China) Mr Lu Xu (Shanghai Institute of Applied Physics, China)

Presentation materials

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